Methods and apparatus for rapidly cooling a substrate

ABSTRACT

Methods and apparatus for changing the temperature of a substrate are provided. In some embodiments, a method includes: placing a substrate onto a support surface of a substrate support disposed within an inner volume of a cooling chamber; moving at least one of the substrate support or a plate disposed in the cooling chamber opposite the substrate support from a first position, in which the substrate is placed onto the support surface, to a second position, in which a second volume is created between the support surface and the plate, the second volume being smaller than and substantially sealed off from a remaining portion of the inner volume; flowing a gas into the second volume to increase a pressure within the second volume; and flowing a coolant through a plurality of channels disposed in at least one of the substrate support or the plate to cool the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of co-pending U.S. Pat. No. 9,779,971,issued on Oct. 3, 2017, which is herein incorporated by reference in itsentirety.

FIELD

Embodiments of the present disclosure generally relate to substrateprocessing equipment.

BACKGROUND

Formation of some devices on substrates requires multiple processes invarious chambers. For example, processes such as atomic layer deposition(ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD),etching, etc., may be performed to form or remove layers on a substrate.Many of these processes require the substrate to be heated to a hightemperature and, therefore, subsequent cooling of the processedsubstrate is necessary.

Some processes require a cool down step before further process steps canbe performed. The inventors have observed that many conventional cooldown stations are operated in a high vacuum environment and, therefore,take a long period of time to cool a substrate. As such, these coolingstations are a bottleneck in a substrate transfer process in which thesubstrate is moved from one chamber to another.

Therefore, the inventors have provided improved cooling chambers formore rapidly cooling a substrate.

SUMMARY

Embodiments of methods and apparatus for rapidly cooling a substrate areprovided herein. In some embodiments, a cooling chamber for cooling asubstrate includes a chamber body having an inner volume; a substratesupport disposed in the chamber and having a support surface to supporta substrate; a plate disposed in the chamber body opposite the substratesupport, wherein the substrate support and the plate are movable withrespect to each other between a first position and a second position,wherein when in the first position the substrate support and the plateare disposed away from each other such that the support surface isexposed to a first volume within the inner volume, wherein when in thesecond position the substrate support and the plate are disposedadjacent to each other such that the support surface is exposed to asecond volume within the inner volume, and wherein the second volume issmaller than the first volume; a plurality of flow channels disposed inone or more of the plate or the substrate support to flow a coolant; anda gas inlet to provide a gas into the second volume.

In some embodiments, a substrate processing system includes a centralvacuum transfer chamber; at least one vacuum processing chamber coupledto the central vacuum transfer to perform a process on a substrate; andat least one cooling chamber coupled to the central vacuum transferchamber to cool the substrate. The cooling chamber may include a chamberbody having an inner volume; a substrate support disposed in the chamberand having a support surface to support a substrate; a plate disposed inthe chamber body opposite the substrate support, wherein the substratesupport and the plate are movable with respect to each other between afirst position and a second position, wherein when in the first positionthe substrate support and the plate are disposed away from each othersuch that the support surface is exposed to a first volume within theinner volume, wherein when in the second position the substrate supportand the plate are disposed adjacent to each other such that the supportsurface is exposed to a second volume within the inner volume, andwherein the second volume is smaller than the first volume; a pluralityof flow channels disposed in one or more of the plate or the substratesupport to flow a coolant; and a gas inlet to provide a gas into thesecond volume.

In some embodiments a method for cooling a substrate includes placing asubstrate onto a support surface of a substrate support disposed withinan inner volume of a cooling chamber; moving at least one of thesubstrate support or a plate disposed in the cooling chamber oppositethe substrate support from a first position, in which the substrate isplaced onto the support surface, to a second position, in which a secondvolume is created between the support surface and the plate, the secondvolume being smaller than and substantially sealed off from a remainingportion of the inner volume; flowing a gas into the second volume toincrease a pressure within the second volume; and flowing a coolantthrough a plurality of channels disposed in at least one of thesubstrate support or the plate to cool the substrate.

Other and further embodiments of the present disclosure are describedbelow.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure, briefly summarized above anddiscussed in greater detail below, can be understood by reference to theillustrative embodiments of the disclosure depicted in the appendeddrawings. It is to be noted, however, that the appended drawingsillustrate only typical embodiments of this disclosure and are thereforenot to be considered limiting of its scope, for the disclosure may admitto other equally effective embodiments.

FIG. 1 depicts a processing system suitable for use with the inventivecooling chamber in accordance with some embodiments of the presentdisclosure.

FIG. 2 depicts a cooling chamber in accordance with some embodiments ofthe present disclosure.

FIG. 3 depicts a partial view of the inventive cooling chamber inaccordance with some embodiments of the present disclosure.

FIG. 4 depicts a partial view of the inventive cooling chamber inaccordance with some embodiments of the present disclosure.

FIG. 5 depicts a top of a substrate support suitable for use with theinventive cooling chamber in accordance with some embodiments of thepresent disclosure.

FIG. 6 depicts a flow diagram illustrating a method for cooling asubstrate in accordance with some embodiments of the present disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. The figures are not drawn to scale and may be simplifiedfor clarity. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

Embodiments of methods and apparatus for rapidly cooling a substrate areprovided herein. Embodiments of the inventive cooling chamber mayadvantageously increase throughput by decreasing the amount of timenecessary to cool a substrate. Embodiments of the inventive processingchamber may advantageously be easily retrofitted to existing processingsystems, thereby avoiding unnecessary and costly modification ofexisting processing systems.

FIG. 1 is a schematic top-view diagram of an exemplary multi-chamberprocessing system 100 that may be suitable for use with the presentinventive cooling chamber disclosed herein. Examples of suitablemulti-chamber processing systems that may be suitably modified inaccordance with the teachings provided herein include the ENDURA®,CENTURA®, and PRODUCER® processing systems or other suitable processingsystems commercially available from Applied Materials, Inc., located inSanta Clara, Calif. Other processing systems (including those from othermanufacturers) may be adapted to benefit from the embodiments disclosedin this application.

In some embodiments, the multi-chamber processing system 100 maygenerally comprise a vacuum-tight processing platform 102, a factoryinterface 104, and a system controller 140. The processing platform 102may include a plurality of process chambers 190A-D, at least one coolingchamber 195A-B (two shown in FIG. 1) and at least one load-lock chamber(two shown) 184 that are coupled to a transfer chamber 188. A transferrobot 106 is centrally disposed in the transfer chamber 188 to transfersubstrates between the load lock chambers 184, the process chambers190A-D, and the at least one cooling chamber 195A-B. The processchambers 190A-D may be configured to perform various functions includinglayer deposition including atomic layer deposition (ALD), chemical vapordeposition (CVD), physical vapor deposition (PVD), etch, pre-clean,de-gas, orientation and center-finding, annealing, and other substrateprocesses. Each of the process chambers 190A-D may include a slit valveor other selectively sealable opening to selectively fluidly couple therespective inner volumes of the process chambers 190A-D to the innervolume of the transfer chamber 188. Similarly, each load lock chamber184 may include a port to selectively fluidly couple the respectiveinner volumes of the load lock chambers 184 to the inner volume of thetransfer chamber 188.

The factory interface 104 is coupled to the transfer chamber 188 via theload lock chambers 184. In some embodiments, each of the load lockchambers 184 may include a first port 123 coupled to the factoryinterface 104 and a second port 125 coupled to the transfer chamber 188.The load lock chambers 184 may be coupled to a pressure control systemwhich pumps down and vents the load lock chambers 184 to facilitatepassing the substrate between the vacuum environment of the transferchamber 188 and the substantially ambient (e.g., atmospheric)environment of the factory interface 104.

In some embodiments, the factory interface 104 comprises at least onedocking station 183 and at least one factory interface robot 185 (oneshown) to facilitate transfer of substrates from the factory interface104 to the processing platform 102 for processing through the load lockchambers 184. The docking station 183 is configured to accept one ormore (four shown) front opening unified pods (FOUPs) 187A-D. Optionally,one or more metrology stations (not shown) may be coupled to the factoryinterface 104 to facilitate measurement of the substrate from the FOUPs187A-D. A substrate treatment apparatus 195 may also be coupled to thefactory interface 104 to enable treatment of the substrates before theyare moved to the load lock chambers 184. The factory interface robot 185disposed in the factory interface 104 is capable of linear androtational movement (arrows 182) to shuttle cassettes of substratesbetween the load lock chambers 184 and the one or more FOUPs 187A-D.Because current cooling apparatuses are in the same vacuum environmentas the rest of the processing platform, the time it takes to cool asubstrate is adversely affected. The inventors have designed a coolingchamber, which, although is disposed in the processing platform atvacuum, can cool the substrate in an environment with a pressure higherthan vacuum, thereby reducing the time required to cool the substrate.

FIG. 2 depicts a cooling chamber 200 according to some embodiments ofthe present disclosure. The cooling chamber 200 may be used in themulti-chamber processing system 100 described above, or in othermulti-chamber processing systems. The cooling chamber 200 generallycomprises a chamber body 202 defining an inner volume 204, a substratesupport 208 disposed within the inner volume 204, and a plate 214disposed opposite the substrate support.

The substrate support 208 includes a support surface 210 to support asubstrate 212 during cooling. The substrate 212 may rest directly uponthe support surface or on other support elements. For example, asdepicted in FIG. 5, in some embodiments, a plurality of support elements506 may be provided to support the substrate 212 in a spaced apartrelation to the support surface 210 to minimize potential contaminationof the substrate 212 through contact with the substrate support 208. Theplurality of support elements 506 may be formed of any material whoseproperties prevent contamination (e.g., particle generation orundesirable material adhesion to the substrate) of the backside of thesubstrate 212. For example, in some embodiments, the plurality ofsupport elements 506 are sapphire balls.

The plate 214 is disposed opposite the support surface 210 of thesubstrate support 208. In some embodiments, the plate 214 may bedisposed in or proximate a lid or upper portion of the chamber body 202(as shown in FIG. 2). The substrate support 208 and the plate 214 aremovable with respect to each other between a first position wherein thesubstrate support 208 and the plate 214 are disposed away from eachother (e.g., as shown in FIG. 2) and a second position wherein thesubstrate support 208 and the plate 214 are disposed adjacent to eachother (e.g., as shown in FIG. 3).

In the first position, the support surface 210 of the substrate support208 is exposed to a first volume 206 within the inner volume 204. Thefirst volume 206 is essentially the entire inner volume 204. Forexample, the first volume 206 may be predominantly bounded by the plate214 and inner surfaces of the chamber body 202. In the second position,the support surface 210 is exposed to a second volume (second volume 306shown in FIG. 3) within the inner volume 204. The second volume 306 issmaller than the first volume 206. For example, the second volume 306may be predominantly bounded by the plate 214 and the support surface210 of the substrate support 208. The second volume 306 may be orders ofmagnitude smaller than the first volume 206. For example, in someembodiments, the second volume 306 may be less than 10 percent, or lessthan five percent, or about 2 to about 3 percent of the first volume206. In one non-limiting example, the first volume may be about 9 litersand the second volume may be about 0.25 liters.

In some embodiments, the plate 214 is fixed and the substrate support208 may be coupled to a lift mechanism 226 to control the position ofthe substrate support 208 between the first position (e.g., a lowerposition as shown in FIG. 2) and the second position (e.g., an upperposition as shown in FIG. 3). Alternatively or in combination, the plate214 may be movable with respect to the substrate support 208. In theconfiguration shown in FIG. 2, the first, or lower position is suitablefor transferring substrates into and out of the chamber via an opening222 disposed in a wall of the chamber body 202. The opening 222 may beselectively sealed via a slit valve 224, or other mechanism forselectively providing access to the interior of the chamber through theopening 222. The second, or upper position is suitable for more rapidlycooling the substrate.

A lift pin assembly 238 including a plurality of lift pins may beprovided to raise the substrate 212 off of the support surface 210 tofacilitate placement and removal of the substrate 212 onto and off ofthe substrate support 208. FIG. 5 depicts a top view of a substratesupport in accordance with embodiments of the present disclosure. Asdepicted in FIG. 5, a plurality of lift pin holes 504 are shownextending through the substrate support 208 to facilitate movement ofthe lift pins of the lift pin assembly 238.

Returning to FIG. 2, the cooling chamber 200 may include one or moremechanisms to enhance the rate of cooling of the substrate 212. In someembodiments, a gas supply 228 may be coupled to the cooling chamber 200via a gas inlet to provide one or more gases to the inner volume 204.Although only one inlet is shown in FIG. 2, additional or alternativegas inlets may be provided in the plate 214 or in other locationssuitable to provide the one or more gases to the second volume 306.Examples of suitable gases for the one or more gases include inertgases, such as argon (Ar), helium (He), nitrogen (N₂), or the like, orreducing gases, such as hydrogen (H₂) or the like, or combinations ofthese gases

Specifically, the gas supply 228 supplies gas to the second volume 306when the substrate support 208 and the plate 214 are disposed adjacentto each other. Providing the one or more gases to the second volumeadvantageously facilitates raising the pressure within the second volume306, which in turn enhances the rate of heat transfer from the substrateto surrounding components of the cooling chamber 200, such as thesubstrate support 208 and the plate 214. Moreover, by providing the oneor more gases to the second volume 306, which is much smaller than thefirst volume 206 or the inner volume 204 of the cooling chamber 200, thepressure may be raised without significantly raising the pressure of thecoolant chamber 200 as a whole, thereby reducing the time that would berequired to pressurize and depressurize the entire coolant chamber or torely upon a slower rate of cooling of the substrate in the lowerpressure environment.

In some embodiments, the gas inlet may be provided through the plate 214to provide the one or more gases to the second volume 306. For example,as shown in greater detail in FIG. 3, in some embodiments, the gassupply 228 may be coupled to the second volume 306 through a centralopening 304 (e.g., a gas inlet) disposed through the plate 214. A cover310 may be coupled to the plate 214 on a surface opposite the innervolume 204. The cover 310 is coupled to a conduit 314 that leadsultimately to the gas supply 228. A seal or gasket 312 may be disposedbetween the cover 310 and the plate 214 to minimize or prevent leakageof the one or more gases provided by the gas supply 228 duringoperation. Other configurations of providing the gas inlet in the plate214 or other locations may also be used.

Returning to FIG. 2, in some embodiments, an annular seal 236 may bedisposed between the substrate support 208 and the plate 214 such thatthe annular seal 236 contacts the plate 214 when in the substratesupport 208 and the plate 214 are in the second position. The annularseal surrounds the support surface 210 of the substrate support 208. Theannular seal 236 serves to substantially seal off the second volumedefined between the plate 214 and the support surface 210 when thesubstrate support 208 is in the upper position. Thus, the annular seal236 facilitates controlling the amount of isolation between the secondvolume 306 and the remaining portion of the inner volume 204 such thatthe one or more gases provided to the second volume 306 flow into theremaining portion of the inner volume at a low, controlled rate.

In some embodiments, the annular seal 236 is disposed in the substratesupport 208. In some embodiments, the substrate support 208 may includean outer ring 232 surrounding the support surface 210. The outer ring232 includes an annular groove 234 which retains the annular seal 236.For example, as illustrated in FIG. 3, when the substrate support 208 isin the second position, the annular seal 236 substantially seals thesecond volume 306 from the remaining portion of the inner volume 204 ofthe cooling chamber 200.

In some embodiments, a second annular seal 302 may be disposed betweenthe outer ring 232 and the substrate support 205 to ensure that thepressurized one or more gases in the second volume 306 do not flow intothe remaining portion of the inner volume 204 from beneath the outerring 232. For example, the second annular seal 302 may be disposed in asecond annular groove 308 in a bottom surface of the outer ring 232.Alternatively, the second annular seal 302 may be disposed partially orcompletely within a groove formed in the substrate support 208.

FIG. 4 depicts a close-up of area around the outer ring 232 while thesubstrate support is in the second position shown in FIG. 3 to moreclearly show features for controlling the flow of the one or more gasesfrom the second volume 306 into the remaining portion of the innervolume 204. As illustrated in FIG. 4, an annular channel 402 is disposedbetween the outer ring 232 and the substrate support 208. For example,the annular channel 402 may be defined between an inner diameter of aportion of the outer ring 232 adjacent the support surface 210 and anouter diameter of the support surface 210 of the substrate support 208.The annular channel 402 extends in a direction opposite the plate 214.

At least one through hole 404 may be disposed through the outer ring 232from a peripheral surface of the outer ring 232 to the annular channel402. The at least one through hole 404 and the annular channel 402fluidly couple the second volume 306 to the remaining portion of theinner volume 204. For example, FIG. 5 depicts a top view of a substratesupport in accordance with embodiments of the present disclosure. Asdepicted in FIG. 5, three through holes 404 are shown extending from theannular channel 402 to the peripheral edge of the outer ring 232.Although three through holes 404 are illustrated in FIG. 5, it should benoted that any number of through holes (e.g., one or more) may beprovided to control the flow of gas from the second volume 306 to theremaining portion of the inner volume 204.

Returning to FIG. 4, in some embodiments, the annular channel 402 issubstantially vertical and the at least one through hole 404 issubstantially horizontal (e.g., the annular channel 402 and the at leastone through hole 404 may be perpendicular to each other). The at leastone through hole 404 may include an outer section 406 with a diameterlarger than that of the through hole 404. The arrows depicted in FIG. 4illustrate a gas flow path according to some embodiments of the presentdisclosure wherein the inner volume 204 of the coolant chamber ismaintained at a first pressure and the second volume 306 is maintainedat a second pressure that is greater than the first pressure. Asillustrated in FIG. 4, the resultant flow path provides a choked flow ofgas from the second volume 306 to the remaining portion of the innervolume 204.

Returning to FIG. 2, in some embodiments, an inner volume facing surfaceof the plate 214 may be contoured to facilitate providing a smooth,laminar, and more uniform flow of gas within the second volume 306. Forexample, the surface of the plate 214 facing the second volume may beconcave, to form a shallow bowl or funnel that provides a greaterthickness across the second volume 306 near a central axis of thesubstrate support 208 (and the plate 214) and a lesser reducingthickness across the second volume 306 at positions radially outward ofthe central axis. In some embodiments, a thickness of the plate 214increases outwardly from the central opening 304 to provide the concaveshape of the second volume facing surface of the plate 214.

In some embodiments, at least one of the plate 214 or the substratesupport 208 may include one or more flow channels to flow a coolant toincrease the rate of cooling of the substrate 212. For example, as shownin FIG. 2, the substrate support 208 may include one or more flowchannels 218 disposed in the substrate support 208, for example, beneaththe support surface 210. A coolant supply 216 may be coupled to the oneor more flow channels 218 to supply a coolant to the flow channels 218.Alternatively or in combination, the plate 214 may include one or moreflow channels 230, which may be coupled to the coolant supply 216, or toa second coolant supply 231 (as depicted in FIG. 2).

In some embodiments, a gas supply 220 may be coupled to the substratesupport 208 to supply a backside gas through an opening (shown in FIG.5) in the support surface 210, which may include a plurality of grooves(not shown) to improve the backside gas circulation. Providing abackside gas can further enhance the rate of cooling of the substrate212 by improving heat conduction between the substrate and the substratesupport 208. For example, FIG. 5 depicts a top view of the substratesupport in accordance with embodiments of the present disclosure. Asillustrated in FIG. 5, the substrate support 208 may include a centralopening 502 to flow a backside gas to a region disposed between thesupport surface 210 and a backside of the substrate 212 when disposed onthe substrate support 208. The central opening 502 is in fluidcommunication with the gas supply 220 to flow a backside gas into aspace between the support surface 210 and a backside of the substrate212 to improve the cooling of the substrate.

Returning to FIG. 2, in some embodiments, a controller 250 may beprovided for controlling operation of the cooling chamber 200. Thecontroller 250 may be one of any form of general-purpose computerprocessor that can be used in an industrial setting for controllingvarious chambers and sub-processors. The memory, or computer-readablemedium, 256 of the CPU 252 may be one or more of readily availablememory such as random access memory (RAM), read only memory (ROM),floppy disk, hard disk, or any other form of digital storage, local orremote. The support circuits 254 are coupled to the CPU 252 forsupporting the processor in a conventional manner. These circuitsinclude cache, power supplies, clock circuits, input/output circuitryand subsystems, and the like.

The methods disclosed herein may generally be stored in the memory 256as a software routine 258 that, when executed by the CPU 252, causes thecooling chamber 200 to perform processes of the present disclosure. Thesoftware routine 258 may also be stored and/or executed by a second CPU(not shown) that is remotely located from the hardware being controlledby the CPU 252. Some or all of the method of the present disclosure mayalso be performed in hardware. As such, embodiments of the presentdisclosure may be implemented in software and executed using a computersystem, in hardware as, e.g., an application specific integrated circuitor other type of hardware implementation, or as a combination ofsoftware and hardware. The software routine 258 may be executed afterthe substrate 212 is positioned on the substrate support 208. Thesoftware routine 258, when executed by the CPU 252, transforms thegeneral purpose computer into a specific purpose computer (controller)250 that controls the chamber operation such that the methods disclosedherein are performed.

FIG. 6 depicts a flow diagram illustrating a method 600 in accordancewith some embodiments of the present disclosure. The method 600 may beimplemented via the controller 250 as discussed above. The method 600generally begins at 605, where the substrate 212 is placed on thesupport surface 210 of the substrate support 208. During this process,the lift pin assembly 238 extends through the plurality of lift pinholes 504 to receive the substrate 212 and is subsequently lowered toallow the substrate 212 to rest on the support surface (e.g., directlyor on the plurality of support elements).

At 610, the relative position of the substrate support 208 and the plate214 is moved from a first position (e.g., FIG. 2), which facilitatesplacement and removal of the substrate 212 onto the substrate support208, to a second position (e.g., FIGS. 3 and 4), in which the annularseal 236 disposed in the outer ring 232 contacts a periphery of theplate 214 to substantially seal off a second volume 306 from theremaining portion of the inner volume 204 of the cooling chamber 200. Insome embodiments, the substrate support 208 is moved and the plate 214is fixed. In some embodiments, the plate 214 may be moved in addition toor instead of the substrate support 208.

At 615, a gas is flowed from the gas supply 228 through the centralopening 304 of the plate 214 and into the second volume 306. The flow ofgas into the second volume 306 increases the pressure inside of thesecond volume 306 to a pressure higher than that of the inner volume204. The gas then flows from the second volume 306 through the annularchannel 402 and through the at least one through hole 404 into theremaining portion of the inner volume 204. In order to more easilymaintain the increased pressure inside of the second volume 306 withoutraising the pressure within the inner volume 204 by too great an amount,the annular channel 402 and the at least one through hole 404 are sizedand shaped to create a choked flow. The increased pressure improves thecontact area between the substrate 212 and the support surface 210,which results in improved conduction between the substrate 212 and thesupport surface 210. Moreover, the increased pressure improvesconduction through the gas from the substrate to the plate 214, furtherenhancing the rate of cooling of the substrate.

At 620, coolant may be flowed through the one or more flow channels 218in the substrate support 208, the one or more flow channels 230 in theplate 214, or both, to more rapidly cool the substrate 212. The coolantmay include any known coolant such as, for example, water, such asdeionized (DI) water, a suitable perfluoropolyether (PFPE) fluid, suchas GALDEN®, or the like.

At 625, the flow of the gas from the gas supply 228 and the gas supply220 are stopped and the substrate support 208 is moved back to the firstposition to facilitate removal of the substrate 212 from the substratesupport. In this position, the lift pin assembly 238 extends through theplurality of lift pin holes 504 to lift the substrate 212 off of thesupport surface 210 to facilitate removal of the substrate 212.

Although described above with respect to rapid cooling of a substrate ina chamber coupled to a vacuum processing tool, the apparatus asdescribed herein could instead be used for rapid heating of thesubstrate by providing a heater or flowing a heat transfer fluid at adesired temperature through the flow channels 218, 230.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof.

The invention claimed is:
 1. A method for changing the temperature of asubstrate, comprising: placing a substrate onto a support surface of asubstrate support disposed within a first volume of an inner volume of acooling chamber; moving at least one of the substrate support or a platedisposed in the cooling chamber opposite the substrate support from afirst position, in which the substrate is placed onto the supportsurface, to a second position, in which a second volume is createdbetween the support surface and the plate by forming a seal between thesubstrate support and the plate in a location disposed radially outwardof the substrate, the second volume being smaller than and substantiallysealed off from a remaining portion of the inner volume; flowing a gasinto the second volume to increase a pressure within the second volume;and flowing a coolant through a plurality of channels disposed in atleast one of the substrate support or the plate to cool the substrate.2. The method of claim 1, further comprising: flowing the coolantthrough the plurality of channels in both of the substrate support andthe plate.
 3. The method of claim 1, further comprising: flowing abackside gas through the substrate support into a space between thesubstrate and the support surface.
 4. The method of claim 1, wherein thesubstrate support comprises an outer ring surrounding the supportsurface, and wherein the outer ring comprises an annular channelextending from the support surface in a direction opposite the plate andat least one through hole extending from the at least one first channelto a peripheral surface of the outer ring.
 5. The method of claim 4,further comprising: flowing the gas from the second volume to theremaining portion of the inner volume through the annular channel andthe at least one through hole, wherein the annular channel and the atleast one through hole create a choked flow.
 6. The method of claim 1,wherein the gas comprises at least one inert gas.
 7. The method of claim1, wherein a thickness of the plate increases along positions radiallyoutward of a central axis of the plate.
 8. The method of claim 1,wherein moving at least one of the substrate support or the platecomprises moving the substrate support toward the plate.
 9. The methodof claim 1, wherein the second volume is substantially sealed off fromthe remaining portion of the inner volume by providing a choked flowcondition between the second volume and the remaining portion of theinner volume such that the pressure inside of the second volume isincreased at a greater rate than the pressure within the remainingportion of the inner volume.
 10. A method for changing the temperatureof a substrate, comprising: placing a substrate onto a support surfaceof a substrate support disposed within a first volume of an inner volumeof a chamber; moving at least one of the substrate support or a platedisposed in the chamber opposite the substrate support from a firstposition, in which the substrate is placed onto the support surface, toa second position, in which a second volume is created between thesupport surface and the plate by forming a seal between the substratesupport and the plate in a location disposed radially outward of thesubstrate, the second volume being smaller than and substantially sealedoff from a remaining portion of the inner volume; flowing a gas into thesecond volume to increase a pressure within the second volume; andflowing a heat transfer fluid through a plurality of channels disposedin at least one of the substrate support or the plate to change thetemperature of the substrate.
 11. The method of claim 10, furthercomprising: flowing the heat transfer fluid through the plurality ofchannels in both of the substrate support and the plate.
 12. The methodof claim 10, wherein the heat transfer fluid is provided at a desiredtemperature to heat the substrate.
 13. The method of claim 10, furthercomprising: flowing a backside gas through the substrate support into aspace between the substrate and the support surface.
 14. The method ofclaim 10, wherein the second volume is substantially sealed off from theremaining portion of the inner volume by providing a choked flowcondition between the second volume and the remaining portion of theinner volume such that the pressure inside of the second volume isincreased at a greater rate than the pressure within the remainingportion of the inner volume.
 15. A method for changing the temperatureof a substrate, comprising: placing a substrate onto a support surfaceof a substrate support disposed within a first volume of an inner volumeof a chamber; moving at least one of the substrate support or a platedisposed in the chamber opposite the substrate support from a firstposition, in which the substrate is placed onto the support surface, toa second position, in which a second volume is created between thesupport surface and the plate by forming a seal between the substratesupport and the plate in a location disposed radially outward of thesubstrate, the second volume being smaller than and substantially sealedoff from a remaining portion of the inner volume; increasing a pressurewithin the second volume; and flowing a heat transfer fluid through aplurality of channels disposed in at least one of the substrate supportor the plate to change the temperature of the substrate.
 16. The methodof claim 15, wherein the heat transfer fluid is provided at a desiredtemperature to heat the substrate.
 17. The method of claim 15, whereinthe heat transfer fluid is provided at a desired temperature to cool thesubstrate.
 18. The method of claim 15, further comprising: flowing theheat transfer fluid through the plurality of channels in both of thesubstrate support and the plate.
 19. The method of claim 15, furthercomprising: flowing a backside gas through the substrate support into aspace between the substrate and the support surface.
 20. The method ofclaim 15, wherein the second volume is substantially sealed off from theremaining portion of the inner volume by providing a choked flowcondition between the second volume and the remaining portion of theinner volume such that the pressure inside of the second volume isincreased at a greater rate than the pressure within the remainingportion of the inner volume.